Semiconductor assembly

ABSTRACT

A semiconductor assembly includes a substrate, a retaining wall, a light emitting unit, and a reflective layer. The substrate has a mounting surface. The retaining wall is disposed on the mounting surface and has an inner surface. An accommodation space is defined by the inner surface and the mounting surface. The light emitting unit is disposed in the accommodation space and disposed on the mounting surface. The light emitting unit has an upper light emitting surface and a side light emitting surface. The reflective resin layer is disposed in the accommodation space and disposed between the inner surface and the side light emitting surface. The reflective resin layer contains a based resin, a UV absorber, and reflective particles.

CROSS-REFERENCE TO RELATED PATENT APPLICATION

This application claims the benefit of priorities to China PatentApplication No. 202211294105.3, files on Oct. 21, 2022 and ApplicationNo. 202310089678.0, filed on Feb. 8, 2023 in People's Republic of China.The entire content of the above identified application is incorporatedherein by reference.

This application claims the benefit of priorities to the U.S.Provisional Patent Application Ser. No. 63/309,755 filed on Feb. 14,2022 and Ser. No. 63/331,907 filed on Apr. 18, 2022, which applicationis incorporated herein by reference in its entirety.

Some references, which may include patents, patent applications andvarious publications, may be cited and discussed in the description ofthis disclosure. The citation and/or discussion of such references isprovided merely to clarify the description of the present disclosure andis not an admission that any such reference is “prior art” to thedisclosure described herein. All references cited and discussed in thisspecification are incorporated herein by reference in their entiretiesand to the same extent as if each reference was individuallyincorporated by reference.

FIELD OF THE DISCLOSURE

The present disclosure relates to a semiconductor assembly, and moreparticularly to a semiconductor assembly that has good reliability.

BACKGROUND OF THE DISCLOSURE

Light emitting dioxide (LED) has advantages of low energy consumption,long service life, and high luminous efficiency. By using differentsemiconductor materials, LED can generate various light that havedifferent wavelengths. Therefore, conventional light sources havegradually been replaced by lighting equipment that is manufactured fromLED.

Materials and metal electrodes in LED are easily to be oxidized by vaporand oxygen in the environment. Therefore, LED is usually encapsulated bya silicone resin acting as an encapsulant to prevent LED from contactingvapor and oxygen.

Compared to C—C bond (bond energy: 145 kcal/mol) in organic materials,Si—O bond (bond energy: 193.5 kcal/mol) in a silicone resin has a higherbond energy. However, breakages still may happen on the silicone resinat a working environment of high temperature or a high energy (such asUV). When the breakages happen, a transmittance of the silicone resinwill decrease, which may negatively influence the luminous efficiency ofthe lighting equipment. In order to evaluate the reliability of thelighting equipment, the lighting equipment is operated with differentpower and measured by the Wet High Temperature Operating Life (WHTOL)test.

FIG. 11 shown a conventional semiconductor assembly which using a singlesilicone resin 80 as the encapsulant. In the conventional semiconductorassembly, a light emitting dioxide 90 is completely encapsulated by thesilicone resin 80, and a dome-shape encapsulant is formed by thesilicone resin 80. However, at a working environment of 90RH % and 60°C., the conventional semiconductor assembly (shown in FIG. 11 ) operatedwith a power of 18 mW cannot pass the WHTOL reliability test (i.e., atolerance time being less than 500 hours). Moreover, gel cracking andluminous attenuation are occurred.

Therefore, how to enhance the reliability of the semiconductor assemblyby improving the structure or the material of the semiconductor assemblyhas become one of the important issues to be solved in the industry.Accordingly, in the case of maintaining the luminous efficiency, thesemiconductor assembly can be operated with high power and operated at ahigh temperature and a high humidity environment.

SUMMARY OF THE DISCLOSURE

In response to the above-referenced technical inadequacy, the presentdisclosure provides a semiconductor assembly.

In one aspect, the present disclosure provides a semiconductor assembly.The semiconductor assembly includes a substrate, a retaining wall, alight emitting unit, and a reflective layer. The substrate has amounting surface. The retaining wall is disposed on the mounting surfaceand has an inner surface. An accommodation space is defined by the innersurface and the mounting surface. The light emitting unit is disposed inthe accommodation space and disposed on the mounting surface. The lightemitting unit has an upper light emitting surface and a side lightemitting surface. The reflective resin layer is disposed in theaccommodation space and disposed between the inner surface and the sidelight emitting surface. The reflective resin layer contains a basedresin, a UV absorber, and reflective particles.

In another aspect, the present disclosure provides a semiconductorassembly. The semiconductor assembly includes a substrate, a lightemitting unit, a Zener chip, a first reflective layer, and a lighttransmitting layer. The substrate has a mounting surface. The lightemitting unit is disposed on the mounting surface. The light emittingunit has an upper light emitting surface and a side light emittingsurface. The Zener chip is disposed on the mounting surface. The Zenerchip is encapsulated by the first reflective layer. The first reflectiveresin layer contains a first silicon-based resin, a UV absorber, andreflective particles. The light emitting unit, the Zener chip, and thefirst reflective resin layer are encapsulated by the light transmittinglayer. The light transmitting layer contains a fluoropolymer.

In yet another aspect, the present disclosure provides a semiconductorassembly. The semiconductor assembly includes a substrate, a lightemitting unit, a Zener chip, a first reflective layer, and a lighttransmitting layer. The substrate has a mounting surface. The mountingsurface includes a center area and a peripheral area surrounding thecenter area. The light emitting unit is disposed on the center area. Thelight emitting unit has an upper light emitting surface and a side lightemitting surface. The Zener chip is disposed on the peripheral area. TheZener chip is encapsulated by the first reflective layer. The firstreflective resin layer contains a first silicon-based resin, a UVabsorber, and reflective particles. The light transmitting layer isdisposed on the center area, and the upper light emitting surface andthe side light emitting surface are covered by the light transmittinglayer. The light transmitting layer contains a fluoropolymer.

In yet another aspect, the present disclosure provides a semiconductorassembly. The semiconductor assembly includes a substrate, a lightemitting unit, a Zener chip, a first reflective layer, and a lighttransmitting layer. The substrate has a mounting surface. The mountingsurface includes a center area and a peripheral area surrounding thecenter area. The light emitting unit is disposed on the center area. Thelight emitting unit has an upper light emitting surface and a side lightemitting surface. The Zener chip is disposed on the center area. TheZener chip is encapsulated by the first reflective layer. The firstreflective resin layer contains a first silicon-based resin, a UVabsorber, and reflective particles. The light transmitting layer isdisposed on the center area, and the light emitting unit, the Zenerchip, and the first reflective resin layer are covered by the lighttransmitting layer. The light transmitting layer contains afluoropolymer.

These and other aspects of the present disclosure will become apparentfrom the following description of the embodiment taken in conjunctionwith the following drawings and their captions, although variations andmodifications therein may be affected without departing from the spiritand scope of the novel concepts of the disclosure.

BRIEF DESCRIPTION OF THE DRAWINGS

The described embodiments may be better understood by reference to thefollowing description and the accompanying drawings, in which:

FIG. 1 is a cross sectional view of a semiconductor assembly accordingto a first embodiment of the present disclosure;

FIG. 2 is a cross sectional view of the semiconductor assembly accordingto a second embodiment of the present disclosure;

FIG. 3 is a cross sectional view of the semiconductor assembly accordingto a third embodiment of the present disclosure;

FIG. 4 is a cross sectional view of the semiconductor assembly accordingto a fourth embodiment of the present disclosure;

FIG. 5 is a cross sectional view of the semiconductor assembly accordingto a fifth embodiment of the present disclosure;

FIG. 6 is a cross sectional view of the semiconductor assembly accordingto a sixth embodiment of the present disclosure;

FIG. 7 is a cross sectional view of the semiconductor assembly accordingto a seventh embodiment of the present disclosure;

FIG. 8 is a cross sectional view of the semiconductor assembly accordingto an eighth embodiment of the present disclosure;

FIG. 9 is a cross sectional view of the semiconductor assembly accordingto a ninth embodiment of the present disclosure;

FIG. 10 is a cross sectional view of the semiconductor assemblyaccording to a tenth embodiment of the present disclosure; and

FIG. 11 is a side view of a conventional semiconductor assembly.

DETAILED DESCRIPTION OF THE EXEMPLARY EMBODIMENTS

The present disclosure is more particularly described in the followingexamples that are intended as illustrative only since numerousmodifications and variations therein will be apparent to those skilledin the art. Like numbers in the drawings indicate like componentsthroughout the views. As used in the description herein and throughoutthe claims that follow, unless the context clearly dictates otherwise,the meaning of “a”, “an”, and “the” includes plural reference, and themeaning of “in” includes “in” and “on”. Titles or subtitles can be usedherein for the convenience of a reader, which shall have no influence onthe scope of the present disclosure.

The terms used herein generally have their ordinary meanings in the art.In the case of conflict, the present document, including any definitionsgiven herein, will prevail. The same thing can be expressed in more thanone way. Alternative language and synonyms can be used for any term(s)discussed herein, and no special significance is to be placed uponwhether a term is elaborated or discussed herein. A recital of one ormore synonyms does not exclude the use of other synonyms. The use ofexamples anywhere in this specification including examples of any termsis illustrative only, and in no way limits the scope and meaning of thepresent disclosure or of any exemplified term. Likewise, the presentdisclosure is not limited to various embodiments given herein. Numberingterms such as “first”, “second” or “third” can be used to describevarious components, signals or the like, which are for distinguishingone component/signal from another one only, and are not intended to, norshould be construed to impose any substantive limitations on thecomponents, signals or the like.

Referring to FIG. 1 , the semiconductor assembly of the presentdisclosure includes a substrate 10, a retaining wall 20, a lightemitting unit 30, and a reflective resin layer 40.

The substrate 10 has a mounting surface 11. A circuit structure 12 isdisposed on the substrate 10. The light emitting unit 30 can beelectrically connected with an outer circuit via the circuit structure12. For example, the substrate 10 can be an aluminum nitride substrateor an aluminum oxide substrate, but the present disclosure is notlimited thereto.

The retaining wall 20 is disposed on the mounting surface 11 and has aninner surface 21. An accommodation space is defined by the inner surface21 and the mounting surface 11. In an exemplary embodiment, the innersurface 21 can be a roughened surface. The roughened surface can enhancethe reflective effect of the retaining wall 20, thereby increasing theluminous efficiency of the semiconductor assembly. In some unshownexemplary embodiments, the substrate 10 and the retaining wall 20 can beintegrally formed.

The light emitting unit 30 is disposed in the accommodation space anddisposed on the mounting surface 11. Specifically, the light emittingunit 30 is fixed on the mounting surface 11 via a die bonding adhesive15 (as shown in FIG. 1 ). A material of the die bonding adhesive 15 canbe a silver solder paste, a gold-tin alloy (AuSn) solder paste, or a tinsolder paste. The light emitting unit 30 has an upper light emittingsurface 31 and a side light emitting surface 32. The upper lightemitting surface 31 is connected with the side light emitting surface32. The upper light emitting surface 31 is a surface of the lightemitting unit 30 that is opposite to the mounting surface 11.

The light emitting unit 30 can include one or more than one LED chips.Types of the LED chips can be, but not limited to, horizontal LED chips,vertical LED chips, or flip-chip LED chips.

In an exemplary embodiment, the light emitting unit 30 can generate UVlight beam. In other words, the light emitting unit 30 can include UVLED chips or LED chips that can convert light into UV light.

In an exemplary embodiment, the light emitting unit 30 can be optionallycovered by a protection layer 33 (as shown in FIG. 2 ). In other words,the protection layer 33 is disposed on the upper light emitting surface31 and the side light emitting surface 32. The protection layer 33includes a light-transmitting resin. The protection layer 33 can preventthe light emitting unit 30 from contacting vapor in the environment.

The reflective resin layer 40 is disposed in the accommodation space anddisposed between the inner surface 21 and the side light emittingsurface 32. It should be noted that the upper light emitting surface 31is not covered by the reflective resin layer 40. Relative to themounting surface 11, a height of the reflective resin layer 40 near theside light emitting surface 32 is lower than or equal to a height of theupper light emitting surface 31.

In an exemplary embodiment, the reflective resin layer 40 has a listricsurface 41 (shown in FIG. 1 ) between the retaining wall 20 and thelight emitting unit 30. In other words, relative to the mounting surface11, the height of the reflective resin layer 40 near the side lightemitting surface 32 is lower than a height of the reflective resin layer40 near the inner surface 21. Due to the listric surface 41, thereflective effect of the reflective resin layer 40 can be enhanced. Inaddition, the listric surface 41 can prevent a UV light beam fromre-entering the reflective resin layer 40, such that the reliability ofthe semiconductor assembly can be enhanced.

In another exemplary embodiment, the reflective resin layer 40 can alsohave a concave surface between the retaining wall 20 and the lightemitting unit 30. In other words, relative the mounting surface 11, theheight of the reflective resin layer 40 near the side light emittingsurface 32 is higher than the height of the reflective resin layer 40near the inner surface 21. However, the present disclosure is notlimited thereto.

The reflective resin layer 40 is a light-transmitting layer which ispermeable to light beam. When a thickness H1 of the reflective resinlayer 40 is too thick, the luminous efficiency of the semiconductorassembly is negatively influenced. Therefore, the thickness H1 of thereflective resin layer 40 should be thinner than 300 μm. For thesufficient UV reflection effect, the thickness H1 of the reflectiveresin layer 40 should be thicker than 50 μm. In the specification, thethickness H1 of the reflective resin layer 40 refers to a thickness ofthe reflective resin layer 40 near the side light emitting surface 32relative to the mounting surface 11.

The reflective resin layer 40 has functions of reflecting UV light andabsorbing UV light. A material of the reflective resin layer 40 containsa based resin, a UV absorber, and reflective particles.

The based resin is a silicon-based resin. Specifically, thesilicon-based resin can optionally be a silicon-based resin includingmethyl group or a thermosetting silicon-based resin according to variousrequirements. For example, the based resin can be a methyl siliconresin, a methyl phenyl vinyl silicon resin, or a combination thereof.

The UV absorber can absorb UV light, especially for UV light that has awavelength ranging from 250 nm to 400 nm and convert light energy intoheat energy. When the based resin is exposed to light, the UV absorbercan prevent the based resin from bond breakages through a chemicallyabsorption mechanism.

The reflective particles can enhance the reflectivity of the reflectiveresin layer 40. When the based resin is exposed to light, the reflectiveparticles can prevent the based resin from bond breakages through aphysical reflection mechanism. Average particular size of the reflectiveparticles ranges from 0.2 μm to 20 μm. When the particular size of thereflective particles is too large, the reflective particles aredifficult to mix with other components, thereby leading to a poorreflection effect. When the particular size of the reflective particlesis too small, the reflective particles are easily to settle down, whichcauses the reflective resin layer 40 has a poor reflection effect atbottom. For example, the reflective particles can be PTFE particles orzirconium dioxide particles. Preferably, the reflective particles arePTFE particles. However, the present disclosure is not limited thereto.

In an exemplary embodiment, based on a total weight of the based resinbeing 100 phr, an amount of the UV absorber ranges from 0.1 phr to 15phr. Excessive UV absorber may absorb most of light, thereby weakeningthe luminous efficiency of the semiconductor assembly. In addition, asolvent to dissolve the UV absorber tends to react with thesilicon-based resin so that the silicon-based resin has difficulty incuring. Insufficient UV absorber cannot avoid the silicon-based resinfrom being degraded by UV light, and then the reliability of thesemiconductor assembly is negatively influenced.

In an exemplary embodiment, based on the total weight of the based resinbeing 100 phr, an amount of the reflective particles ranges from 5 phrto 75 phr; preferably, the amount of the reflective particles rangesfrom 25 phr to 50 phr. Excessive reflective particles causes a highviscosity so that the material of the reflective resin layer 40 hasdifficulty while dispensing. Insufficient reflective particles cannotenhance the luminous efficiency of the semiconductor assembly.

In addition to the based resin, the UV absorber, and the reflectiveparticles, the reflective resin layer 40 can further include a hinderedamine light stabilizer (HALS). The hindered amine light stabilizer canrepair bond breakages, so that the hindered amine light stabilizer canalso prevent the based resin from bond breakages.

In an exemplary embodiment, based on the total weight of the based resinbeing 100 phr, an amount of the HALS ranges from 0.1 phr to 15 phr. Asolvent to dissolve the HALS tends to react with the silicon-based resinso that excessive HALS causes the silicon-based resin having difficultywhile curing. Insufficient HALS cannot improve the reliability of thesemiconductor assembly.

First Embodiment

Referring to FIG. 1 , the semiconductor assembly of a first embodimentof the present disclosure includes: the substrate 10, the retaining wall20, the light emitting unit 30, and the reflective resin layer 40.

The substrate 10 is an aluminum nitride substrate. The retaining wall20, the light emitting unit 30, and the reflective resin layer 40 aredisposed on the mounting surface 11 of the substrate 10. The lightemitting unit 30 is surrounded by the retaining wall 20. The reflectiveresin layer 40 is formed between the retaining wall 20 and the lightemitting unit 30.

Specifically, the reflective resin layer 40 contacts the inner sidesurface 21 of the retaining wall 20 and the side light emitting surface32 of the light emitting unit 30, but the upper light emitting surface31 is not covered by the reflective resin layer 40. Relative to themounting surface 11, the height of the reflective resin layer 40 nearthe side light emitting surface 32 is lower than or equal to the heightof the upper light emitting surface 31.

The reflective resin layer 40 has a listric surface which is distantfrom the mounting surface 11. Relative to the mounting surface 11, theheight of the reflective resin layer 40 near the side light emittingsurface 32 is lower than the height of the reflective resin layer 40near the upper light emitting surface 31. Accordingly, the reflectioneffect and the reliability of the semiconductor assembly can beenhanced.

The light emitting unit 30 is disposed on the circuit structure 12 viathe die bonding adhesive 15 so as to electrically connect the lightemitting unit 30 with the circuit structure 12. The circuit structure 12is embedded in the substrate 10, and partially exposed from the mountingsurface 11 of the substrate 10 and partially exposed from an oppositesurface of the mounting surface 11. Therefore, the light emitting unit30 can be electrically connected with an outer circuit to supply powerto the semiconductor assembly.

In order to prove that the semiconductor assembly of the presentdisclosure has a high reliability, the semiconductor assemblies inExamples 1 to 2 and Comparative Examples 1 to 5 are manufacturedaccording to the first embodiment. The luminous efficiency and thereliability of the semiconductor assembly are measured and listed inTable 1.

In the luminous efficiency test, the semiconductor assembly is poweredwith 0.3 W to generate a light beam. A light intensity of thesemiconductor assembly of Comparative Example 1 is defined as 100%, soas to evaluate the relationship between the light intensity and thereliability of the semiconductor assembly.

In the reliability test, the semiconductor assembly generates a lightbeam at a room temperature environment (25° C.) and at a warm and dampenvironment (60° C., humidity: 90%), so as to evaluate the reliabilityof the semiconductor assembly. After 500 hours of continuous operation,the semiconductor assembly that can maintain its original structure andhave a luminous attenuation lower than 30% is marked with the term“PASS”; the semiconductor assembly that is damaged or peeled off andhave a luminous attenuation higher than or equal to 30% is marked withthe term “FAIL”.

The difference between Examples 1 to 2 and Comparative Examples 1 to 5is that the components of the reflective resin layer 40. Specifically,the reflective resin layer 40 in Examples 1 to 2 contains the basedresin, the UV absorber, and the reflective particles. In addition, thereflective resin layer 40 in Example 2 further contains the HALS. Thereflective resin layer 40 in Comparative Examples 1 to 5 does notcontain the UV absorber and the reflective particles at the same time.Specific components of the reflective resin layer 40 in Examples 1 to 2and Comparative Examples 1 to 5 are listed in Table 1. In Examples 1 to2 and Comparative Examples 1 to 5, the reflective particles arepolytetrafluoroethylene (PTFE) particles, the UV absorber is2-(2,4-dihydroxyphenyl)-4,6-bis(2,4-dimethyl-phenyl)-1,3,5-triazine, andthe HALS is bis(2,2,6,6-tetramethyl-1-(octyloxy)-4-piperidinyl) ester.The thickness H1 of the reflective resin layer 40 ranges from 200 μm to300 μm.

When the thickness H1 of the reflective resin layer 40 is too thick, thereflective effect of the reflective resin layer 40 will be reducedinstead, and the light beam reflected by the reflective resin layer 40may enter the light transmitting layer (i.e., the first lighttransmitting layer and the second light transmitting layer), whichcauses crack in the light transmitting layer. When the thickness H1 ofthe reflective resin layer 40 is too thin, the reflective effect of thereflective resin layer 40 will be similar to the reflective effect ofthe light transmitting layer, and the reliability of the semiconductorassembly cannot be enhanced.

TABLE 1 Example Comparative Example (phr) 1 2 1 2 3 4 5 Reflective Basedresin 100 100 100 100 100 100  100  resin layer Reflective 40 40 40 — —— 40 particles UV 10 10 —  10 — 10 — absorber HALS — 10 — —  10 10 10Properties Luminous 85% 85% 100% 61% 88% 61% 100% of semi- efficiencyconductor test assembly Reliability PASS PASS FAIL PASS FAIL PASS FAILtest (1500 hours (2000 hours (168 hours (500 hours (bond (500 hours (168hours reliability reliability reliability reliability breakage)reliability reliability test) test) test) test) test) test)

According to the result of Table 1, for containing the based resin, theUV absorber, and the reflective particles, the reflective resin layer 40can enhance the reliability of the semiconductor assembly, and theluminous efficiency of the semiconductor assembly can be adequatelymaintained.

Specifically, the semiconductor assembly in Example 1 can pass the 1500hours reliability test with a light emitting power of less than 40 mW.The semiconductor assembly in Example 2 can pass the 2000 hoursreliability test with a light emitting power of less than 40 mW. Thesemiconductor assembly in Comparative Example 1 cannot pass the 168hours reliability test with a light emitting power of less than 40 mW.The semiconductor assembly in Comparative Example 2 can pass the 500hours reliability test with a light emitting power of less than 40 mW,but the luminous efficiency is low and only reaches 61% relative toComparative Example 1. Bond breakages occur in the semiconductorassembly in Comparative Example 3 with a light emitting power of lessthan 10 mW, so that the semiconductor assembly in Comparative Example 3cannot pass the reliability test. The semiconductor assembly inComparative Example 4 can pass the 500 hours reliability test emittinglight with a light emitting power of less than 20 mW. The semiconductorassembly in Comparative Example 5 cannot pass the 168 hours reliabilitytest with a light emitting power of less than 40 mW.

In order to prove that the semiconductor assembly of the presentdisclosure can endure a harsh temperature environment, the semiconductorassembly in Examples 2 and 3 are processed a thermal shock test, and theresults are listed in Table 2. The semiconductor assembly in Examples 2and 3 is manufactured according to the first embodiment.

In Examples 2 and 3, the reflective particles, the UV absorber, and theHALS are the same as those mentioned above, so it is not repeatedherein. The based resin used in Example 2 is a silicon-based resin thathas a low hardness (cured hardness: Shore A52). The based resin used inExample 3 is a silicon-based resin that has a high hardness (curedhardness: Shore D35).

Specific components of the reflective resin layer 40 in Examples 2 and 3are listed in Table 2. The thickness H1 of the reflective resin layer 40ranges from 200 μm to 300 μm.

In the thermal shock test, the endurance of the semiconductor assemblyat harsh temperature environment is evaluated within a temperature rangefrom −40° C. to 125° C. by a changing rate of 40° C. per minute. After1000 cycles of temperature changes, the term “PASS” represents that thestructure of the semiconductor assembly can still be maintained intact,and the term “FAIL” represents that the structure of the semiconductorassembly is peeled off or damaged.

TABLE 2 Example (phr) 2 3 Reflective resin layer Based resin 100 100Reflective particles 40 30 UV absorber 10 10 HALS 10 — Property ofThermal shock test PASS PASS semiconductor assembly

According to the result of Table 2, the semiconductor assembly of thepresent disclosure can endure the harsh temperature environment.Specifically, the semiconductor assembly in Examples 2 and 3 can have acomplete structure after 1000 cycles of temperature change.

Second Embodiment

Referring to FIG. 2 , the semiconductor assembly of a second embodimentof the present disclosure is similar to the semiconductor assembly ofthe first embodiment (FIG. 1 ). The semiconductor assembly includes thesubstrate 10, the retaining wall 20, the light emitting unit 30, and thereflective resin layer 40. The difference between the second embodimentand the first embodiment is that: the light emitting unit 30 is coveredby a protection layer 33.

The protection layer 33 is formed on the upper light emitting surface 31and the side light emitting surface 32, so as to protect the lightemitting unit 30. In addition, the protection layer 33 can prevent thelight emitting unit 30 from contacting vapor in the environment. Amaterial of the protection layer 33 includes a light-transmitting resin,such as a fluoropolymer resin.

Third Embodiment

Referring to FIG. 3 , the semiconductor assembly of a third embodimentof the present disclosure is similar to the semiconductor assembly ofthe first embodiment (FIG. 1 ). The semiconductor assembly includes thesubstrate 10, the retaining wall 20, the light emitting unit 30, and thereflective resin layer 40. The difference between the third embodimentand the first embodiment is that: the semiconductor assembly furtherincludes a first light transmitting layer 50.

The first light transmitting layer 50 is disposed on the mountingsurface 11 and disposed between the substrate 10 and the reflectiveresin layer 40. The first light transmitting layer 50 is permeable to UVlight and can absorb few amounts of UV light. Relative to mountingsurface 11, a thickness H2 of the first light transmitting layer 50 nearthe side light emitting surface 32 ranges from 50 μm to 100 μm.

A material of the first light transmitting layer 50 includes a firstbased resin and a UV absorber. Based on a total weight of the firstbased resin being 100 phr, an amount of the UV absorber ranges from 0.1phr to 2 phr. The first based resin can be a silicon-based resin.Specifically, the first based resin can optionally be a silicon-basedresin containing a methyl group or a thermosetting silicon-based resinaccording to different requirements.

In an exemplary embodiment, the first light transmitting layer 50 canfurther include a HALS. An addition of the HALS can further enhance UVabsorbing effect of the first light transmitting layer 50. Based on thetotal weight of the first based resin being 100 phr, an amount of theHALS ranges from 0.1 phr to 15 phr.

In order to prove that the semiconductor assembly of the presentdisclosure has a high reliability, the semiconductor assembly in Example5 is manufactured according to the third embodiment. Luminous efficiencyand the reliability of the semiconductor assembly in Example 5 aremeasured and listed in Table 3. In the luminous efficiency test, thelight intensity of the semiconductor assembly in Comparative Example 1is defined as 100%.

In Example 5, the reflective particles, the UV absorber, and the HALSare the same as those mentioned above, so it is not repeated herein.Specific components of the reflective resin layer 40 and the first lighttransmitting layer 50 are listed in Table 3. The thickness H1 of thereflective resin layer 40 ranges from 200 μm to 300 μm. The thickness H2of the first light transmitting layer 50 ranges from 5 μm to 150 μm. Ifthe thickness H2 of the first light transmitting layer 50 is too thick,a UV light beam tends to be absorbed by the first light transmittinglayer 50, such that the luminous efficiency of the semiconductorassembly is decreased. If the thickness H2 of the first lighttransmitting layer 50 is too thin, the manufacturing process hasdifficulty in undergoing and quality control.

TABLE 3 (phr) Example 1 Example 5 Reflective resin Based resin 100 100layer Reflective 40 40 particles UV absorber 10 10 HALS — — First lightFirst based — 100 transmitting layer resin UV absorber — 1 Property ofLuminous 85% 78% assembly efficiency test semiconductor Reliability testPASS (1500 hours PASS (500 hours reliability test) reliability test)

According to the result of Table 3, due to the reflective resin layer 40and the first light transmitting layer 50, the reliability of thesemiconductor assembly can be enhanced and the luminous efficiency ofthe semiconductor assembly can be adequately maintained. Specifically,the semiconductor assembly in Example 5 can pass the 500 hoursreliability test with a light emitting power of less than 40 mW.

Fourth Embodiment

Referring to FIG. 4 , a cross sectional view of the semiconductorassembly of a fourth embodiment of the present disclosure is shown inFIG. 4 . The semiconductor assembly of a fourth embodiment of thepresent disclosure is similar to the semiconductor assembly of the thirdembodiment (FIG. 3 ). The semiconductor assembly includes the substrate10, the retaining wall 20, the light emitting unit 30, the reflectiveresin layer 40, and the first light transmitting layer 50. Thedifference between the fourth embodiment and the third embodiment isthat: the semiconductor assembly further includes a second lighttransmitting layer 60.

The second light transmitting layer 60 is disposed on the mountingsurface 11, and disposed between the substrate 10 and the first lighttransmitting layer 50. The second light transmitting layer 60 absorbsmost of the UV light. Relative to the mounting surface 11, a thicknessH3 of the second light transmitting layer 60 near the side lightemitting surface 32 ranges from 70 μm to 150 μm.

A material of the second light transmitting layer 60 includes a secondbased resin and a UV absorber. A concentration of the UV absorber in thesecond light transmitting layer 60 is higher than a concentration of theUV absorber in the first light transmitting layer 50. Based on a totalweight of the second based resin being 100 phr, an amount of the UVabsorber ranges from 5 phr to 15 phr. The second based resin is asilicon-based resin. Specifically, the second based resin can optionallybe a silicon-based resin that containing a methyl group or athermosetting silicon-based resin according to different requirements.The UV absorber can absorb UV light, especially for UV light that has awavelength ranging from 250 nm to 400 nm. When the second based resin isexposed to light, the UV absorber can prevent the second based resinfrom bond breakages through a chemically absorption mechanism.

In order to prove that the semiconductor assembly of the presentdisclosure has a high reliability, the semiconductor assembly inExamples 6 and 7 are manufactured according to the fourth embodiment.Luminous efficiency and the reliability of the semiconductor assembly inExamples 6 and 7 are measured and listed in Table 4. In the luminousefficiency test, the light intensity of the semiconductor assembly inComparative Example 1 is defined as 100%.

In Examples 6 and 7, the reflective particles, the UV absorber, and theHALS are the same as those mentioned above, so it is not repeatedherein. Specific components of the reflective resin layer 40, the firstlight transmitting layer 50, and the second light transmitting layer 60in Examples 6 and 7 are listed in Table 4. The thickness H1 of thereflective resin layer 40 ranges from 200 μm to 300 μm. The thickness H2of the first light transmitting layer 50 ranges from 100 μm to 200 μm.The thickness H3 of the second light transmitting layer 60 is thinnerthan 100 μm. If the thickness H3 of the second light transmitting layer60 is too thick, a space for the reflective resin layer 40 will becompressed, and then the luminous efficiency of the semiconductorassembly is decreased. If the thickness H3 of the second lighttransmitting layer 60 is too thin, the reliability of the semiconductorassembly cannot be enhanced.

TABLE 4 Example (phr) 1 5 6 7 Reflective resin Based resin 100 100 100100 layer Reflective 40 40 40 40 particles UV absorber 10 10 1 1 HALS —— — 1 First light First based resin — 100 100 100 transmitting layer UVabsorber — 1 1 1 HALS — — — 1 Second light Second based — — 100 100transmitting layer resin UV absorber — — 10 10 HALS — — — 10 Property ofLuminous 85% 78% 92% 93% semiconductor efficiency test assemblyReliability test PASS PASS PASS PASS (1500 hours (500 hours (1000 hours(1500 hours reliability reliability reliability reliability test) test)test) test)

According to the result of Table 4, due to the reflective resin layer40, the first light transmitting layer 50, and the second lighttransmitting layer 60, the reliability of the semiconductor assembly canbe enhanced and the luminous efficiency of the semiconductor assemblycan be adequately maintained. Specifically, the semiconductor assemblyin Example 6 can pass the 1000 hours reliability test with a lightemitting power of less than 40 mW. The semiconductor assembly in Example7 can pass the 1500 hours reliability test with a light emitting powerof less than 40 mW.

Passive components, such as Zener chips, are often mounted on thesemiconductor assembly. Common passive components will absorb the lightbeam emitted by the light emitting unit. Therefore, the presentdisclosure proposes a solution of covering or shielding the passivecomponents by reflective resins to reduce light absorption effect of thepassive components. The following describes the solution in detail withreference to following fifth embodiment to tenth embodiment.

Fifth Embodiment

Referring to FIG. 5 , the semiconductor assembly of a fifth embodimentincludes the substrate 10, the light emitting unit 30, a Zener chip 70,a first reflective resin layer 80, and a light transmitting layer 90.

A circuit structure 12 is disposed on the mounting surface 11 of thesubstrate 10. The circuit structure 12 is embedded in the substrate 10,and partially exposed from the mounting surface 11 of the substrate 10and partially exposed from an opposite surface of the mounting surface11.

The light emitting unit 30 is fixed on the circuit structure 12 via thedie bonding adhesive 15 and is electrically connected with the circuitstructure 12. A material of the die bonding adhesive 15 can be a silversolder paste, a gold-tin alloy (AuSn) solder paste, or a tin solderpaste. Accordingly, the light emitting unit 30 can be electricallyconnected with an outer circuit via the circuit structure 12 so as tosupply power to the semiconductor assembly.

An outer limiter 14 is disposed on the mounting surface 11 of thesubstrate 10. In an exemplary embodiment, the outer limiter 14 is windedaround on the mounting surface 11 so as to form a region 110. Due to thedisposition of the outer limiter 14, the light transmitting layer 90 canonly formed in the region 110.

The outer limiter 14 can be a metal material or a plastic material. Forexample, a material of the outer limiter 14 can be copper, gold, orother metals, or an epoxy resin or a silicon resin. When the material ofthe outer limiter 14 is a metal material, the outer limiter 14 can beformed by electroplating. When the material of the outer limiter 14 is aplastic material, the outer limiter 14 can be formed by molding or otherplastic processes. However, the present disclosure is not limitedthereto.

In an exemplary embodiment, a diameter of the outer limiter 14 rangesfrom 3 mm to 3.5 mm. Preferably, the diameter of the outer limiter 14ranges from 3.2 mm to 3.25 mm. In addition, a height of the outerlimiter 14 is higher than a position of a light emitting layer of thelight emitting unit 30 and is higher than a height of the Zener chip 70.

The light emitting unit 30 is disposed on the mounting surface 11 anddisposed in the region 110. The structure of the light emitting unit 30is similar to that in the first embodiment, so it is not repeatedherein.

The Zener chip 70 is disposed on the mounting surface 11 and disposed inthe region 110. The Zener chip 70 can prevent the light emitting unit 30from breakdown by a reverse current. The disposition of the Zener chip70 can protect a circuit and a assembly.

The Zener chip 70 is encapsulated by the first reflective resin layer80. The first reflective resin layer 80 has a dome-shaped surface formedon the mounting surface 11. The first reflective resin layer 80 isdisposed in the circular region 110. The first reflective resin layer 80can not only reduce the light absorption effect of the Zener chip 70 butalso protect the Zener chip 70. Specifically, the first reflective resinlayer 80 can protect the Zener chip 70 from peeling off and damagingduring a high temperature baking process or a molding process.Accordingly, the first reflective resin layer 80 can enhance thereliability of the semiconductor assembly.

A material of the first reflective resin layer 80 includes a firstsilicon-based resin, UV absorber, and reflective particles.

Specifically, the silicon-based resin can optionally be a silicon-basedresin including methyl group or a thermosetting silicon-based resinaccording to various requirements. For example, the first silicon-basedresin can be a methyl silicon resin, a methyl phenyl vinyl siliconresin, or a combination thereof. The UV absorber and the reflectiveparticles are the same as those mentioned above, so it is not repeatedherein.

In an exemplary embodiment, based on a total weight of the firstsilicon-based resin being 100 phr, an amount of the UV absorber in thefirst reflective resin layer 80 ranges from 0.1 phr to 2 phr, such as0.2 phr, 0.4 phr, 0.6 phr, 0.8 phr, 1.0 phr, 1.2 phr, 1.4 phr, 1.6 phr,or 1.8 phr.

In an exemplary embodiment, based on the total weight of the firstsilicon-based resin being 100 phr, an amount of the reflective particlesin the first reflective resin layer 80 ranges from 5 phr to 75 phr, suchas 15 phr, 25 phr, 35 phr, 45 phr, 55 phr, or 65 phr.

In addition to the first silicon-based resin, the UV absorber, and thereflective particles, the first reflective resin layer 80 can furtherinclude a hindered amine light stabilizer (HALS).

In an exemplary embodiment, based on a total weight of the firstsilicon-based resin being 100 phr, an amount of the HALS in the firstreflective resin layer 80 ranges from 0.1 phr to 15 phr, such as 3 phr,6 phr, 9 phr, or 12 phr.

Relative to the mounting surface 11, a thickness H4 of the firstreflective resin layer 80 can range from 150 μm to 200 μm, such as 160μm, 170 μm, 180 μm, or 190 μm.

The light transmitting layer 90 is disposed on the mounting surface 11and disposed in the region 110. The light emitting unit 30, the Zenerchip 70, and the first reflective resin layer 80 are encapsulated by thelight transmitting layer 90. The light transmitting layer 90 has adome-shaped surface formed on the mounting surface 11. The lighttransmitting layer 90 can protect the light emitting unit 30 and theZener chip 70 and further enhance the reliability of the semiconductorassembly. A material of the light transmitting layer 90 includes afluoropolymer. Relative to the mounting surface 11, the thickness H4 ofthe first reflective resin layer 80 ranges from 150 μm to 200 μm. If thethickness H4 of the first reflective resin layer 80 is too thick, aspace for the light transmitting layer 90 will be compressed, and thenthe luminous efficiency of the semiconductor assembly is decreased. Ifthe thickness H4 of the first reflective resin layer 80 is too thin, thefirst reflective resin layer 80 cannot effectively protect the Zenerchip 70, and the reliability of the semiconductor assembly cannot beenhanced.

A thickness H5 of the light transmitting layer 90 can range from 500 μmto 850 μm. For example, the thickness H5 of the light transmitting layer90 can be 550 μm, 600 μm, 650 μm, 700 μm, 750 μm, or 800 μm.

Sixth Embodiment

Referring to FIG. 6 , the semiconductor assembly of a sixth embodimentof the present disclosure is similar to the semiconductor assembly ofthe fifth embodiment (FIG. 5 ). The semiconductor assembly includes thesubstrate 10, the light emitting unit 30, a Zener chip 70, a firstreflective resin layer 80, and a light transmitting layer 90. Thedifference between the sixth embodiment and the fifth embodiment isthat: the light emitting unit 30 is surrounded by a reflective layer 34.

The reflective layer 34 is disposed on the side light emitting surface32 of the light emitting unit 30 so as to concentrate the light beamemitted from the light emitting unit 30. Moreover, the reflective layer34 can protect the light emitting unit 30 from contacting vapor in theenvironment. A material of the reflective layer 34 includes a lighttransmitting silicon resin and reflective particles, such as asilicon-based resin and PTFE particles.

In order to prove that the semiconductor assembly of the presentdisclosure has a high reliability, the semiconductor assembly inExamples 8 and 9 are respectively manufactured according to the fifthembodiment and the sixth embodiment. The semiconductor assembly inComparative Example 6 is manufactured according to the structure shownin FIG. 11 .

The difference between the semiconductor assemblies in ComparativeExample 6 and Examples 8 and 9 is that the first reflective resin layer80 is absent from the semiconductor assemblies in Comparative Example 6.In other words, the Zener chip 70 in Comparative Example 6 is notencapsulated by the first reflective resin layer 80.

In Examples 8 and 9, the reflective particles, the UV absorber, and theHALS are the same as those mentioned above, so it is not repeatedherein. Specific components of the first reflective resin layer 80 inExamples 8 and 9 are listed in Table 5. The material of the lighttransmitting layer 90 in Examples 8 and 9 and Comparative Example 6 is afluoropolymer. Luminous efficiency and the reliability of thesemiconductor assembly in Examples 8 and 9 and Comparative Example 6 aremeasured and listed in Table 5. In the luminous efficiency test, thelight intensity of the semiconductor assembly in Comparative Example 6is defined as 100%.

TABLE 5 Exam- Exam- Comparative (phr) ple 8 ple 9 Example 6 First Firstsilicon-based resin 100 100 — reflective Reflective particles 40 40 —resin layer UV absorber 1 1 — HALS 1 1 — Reflective Light transmitting —60 — layer silicon resin Reflective particles — 40 — Property Luminousefficiency test  102%  105%  100% of semi- Reliability  0 hours  100% 100%  100% conductor test 168 hours 96.3% 95.8% 95.3% assembly 336hours 93.1% 92.3% 91.1% 504 hours 90.2% 89.5% 89.8% 672 hours 85.8%86.2% 85.6% 840 hours 84.3% 84.4% 83.1% 1008 hours  83.2% 83.8% 82.07% 

According to the result of Table 5, due to the first reflective layer 80encapsulating the Zener chip 70, the reliability of the semiconductorassembly can be enhanced and the luminous efficiency of thesemiconductor assembly can be adequately maintained. The disposition ofthe reflective layer 34 surrounding the light emitting unit 30 canprotect the light emitting unit 30 and further enhance the luminousefficiency and the reliability of the semiconductor assembly.

Seventh Embodiment

Referring to FIG. 7 , the semiconductor assembly of a seventh embodimentof the present disclosure is similar to the semiconductor assembly ofthe fifth embodiment (FIG. 5 ). The semiconductor assembly includes thesubstrate 10, the light emitting unit 30, a Zener chip 70, a firstreflective resin layer 80, and a light transmitting layer 90.

The difference between the seventh embodiment and the fifth embodimentis that an inner limiter 13 is disposed on the substrate 10, such thatthe circular region 110 is divided into a center area 111 and aperiphery area 112. The light transmitting layer 90 is disposed in thecenter area 111. It should be noted that the light emitting unit 30 isencapsulated by the light transmitting layer 90; while, the Zener chip70 and the first reflective resin layer 80 are not encapsulated by thelight transmitting layer 90.

The inner limiter 13 and the outer limiter 14 are disposed on themounting surface 11 of the substrate 10. The inner limiter 13 and theouter limiter 14 are respectively winded around on the mounting surface11 to form regions. The inner limiter 13 is encompassed in the regionthat is winded around by the outer limiter 14. The inner limiter 13 andthe outer limiter 14 are concentrically disposed on the mounting surface11.

The region 110 can be further divided into the center area 111 and theperiphery area 112 by the inner limiter 13. In other words, the centerarea 111 is surrounded by the inner limiter 13, and the center area 111and the periphery area 112 are separated by the inner limiter 13.

For example, the inner limiter 13 is winded around on the mountingsurface 11 to form a region (the center area 111). The outer limiter 14is winded around the inner limiter 13, so that a ring area (i.e., theperiphery area 112) between the inner limiter 13 and the outer limiter14 is formed. In other words, the periphery area 112 surrounds thecenter area 111, and the periphery area 112 and the center area 111 areseparated by the inner limiter 13.

In an exemplary embodiment, a ratio of a diameter of the inner limiter13 to a diameter of the outer limiter 14 ranges from 1:1.75 to 1:2.However, the present disclosure is not limited thereto.

In an exemplary embodiment, the diameter of the inner limiter 13 rangesfrom 1.5 mm to 2.0 mm. Preferably, the diameter of the inner limiter 13ranges from 1.7 mm to 1.9 mm. The diameter of the outer limiter 14ranges from 3.0 mm to 3.5 mm. Preferably, the diameter of the outerlimiter 14 ranges from 3.2 mm to 3.25 mm. However, the presentdisclosure is not limited thereto.

Heights of the inner limiter 13 and the outer limiter 14 are preferablyhigher than a light emitting layer of the light emitting unit 30. In anexemplary embodiment, the height of the inner limiter 13 ranges from 50μm to 100 μm. The height of the outer limiter 14 ranges from 150 μm to200 μm. However, the present disclosure is not limited thereto.

In an exemplary embodiment, a width of the inner limiter 13 ranges from100 μm to 150 μm. A width of the outer limiter 14 ranges from 100 μm to250 μm. However, the present disclosure is not limited thereto.

The inner limiter 13 can be a metal material or a plastic material. Inan exemplary embodiment, the inner limiter 13 is a metal material, andthe outer limiter 14 is a plastic material. In an exemplary embodiment,the inner limiter 13 is a plastic material, and the outer limiter 14 isa metal material. In another embodiment, the inner limiter 13 and theouter limiter 14 are plastic materials. However, the present disclosureis not limited thereto.

Eighth Embodiment

Referring to FIG. 8 , the semiconductor assembly of an eighth embodimentof the present disclosure is similar to the semiconductor assembly ofthe seventh embodiment (FIG. 7 ). The semiconductor assembly includesthe substrate 10, the light emitting unit 30, a Zener chip 70, a secondreflective resin layer 80′, and a light transmitting layer 90.

The difference between the seventh embodiment and the fifth embodimentis that the Zener chip 70 is encapsulated by the second reflective resinlayer 80′, and the periphery area 112 is completely covered by thesecond reflective resin layer 80′.

In the eighth embodiment, the second reflective resin layer 80′ isdisposed between the inner limiter 13 and the outer limiter 14 (theperiphery area 112), and has a listric surface formed on the mountingsurface 11 (as shown in FIG. 8 ). Relative to the mounting surface 11, aheight of the second reflective resin layer 80′ near the inner limiter13 is lower than a height of the second reflective resin layer 80′ nearthe outer limiter 14.

In another exemplary embodiment, the second reflective resin layer 80′can have a concave surface formed on the mounting surface 11 and betweenthe inner limiter 13 and the outer limiter 14 (the periphery area 112).In other words, relative to the mounting surface 11, the height of thesecond reflective resin layer 80′ near the inner limiter 13 is higherthan the height of the second reflective resin layer 80′ near the outerlimiter 14. However, the present disclosure is not limited thereto.

The second reflective resin layer 80′ is a light transmitting layerwhich is permeable to light beam. A material of the second reflectiveresin layer 80′ contains a second silicon-based resin, a UV absorber,and reflective particles.

Specifically, the second silicon-based resin can optionally be asilicon-based resin including methyl group or a thermosettingsilicon-based resin according to various requirements. For example, thesecond silicon-based resin can be a methyl silicon resin, a methylphenyl vinyl silicon resin, or a combination thereof. The UV absorber,the reflective particles, and the HALS are the same as those mentionedabove, so it is not repeated herein.

In an exemplary embodiment, based on a total weight of the secondsilicon-based resin being 100 phr, an amount of the UV absorber in thesecond reflective resin layer 80′ ranges from 0.1 phr to 2 phr, such as0.2 phr, 0.4 phr, 0.6 phr, 0.8 phr, 1.0 phr, 1.2 phr, 1.4 phr, 1.6 phr,or 1.8 phr.

In an exemplary embodiment, based on a total weight of the secondsilicon-based resin being 100 phr, an amount of the reflective particlesin the second reflective resin layer 80′ ranges from 5 phr to 75 phr,such as 15 phr, 25 phr, 35 phr, 45 phr, 55 phr, or 65 phr.

In addition to the second silicon-based resin, the UV absorber, and thereflective particles, the second reflective resin layer 80′ can furtherinclude a hindered amine light stabilizer (HALS).

In an exemplary embodiment, based on a total weight of the secondsilicon-based resin being 100 phr, an amount of the HALS in the secondreflective resin layer 80′ ranges from 0.1 phr to 15 phr, such as 3 phr,6 phr, 9 phr, or 12 phr.

Relative to the mounting surface 11, a thickness H6 of the secondreflective resin layer 80′ can range from 150 μm to 200 μm, such as 160μm, 170 μm, 180 μm, or 190 μm.

In order to prove that the semiconductor assembly of the presentdisclosure has a high reliability, the semiconductor assembly inExamples 10 and 11 are respectively manufactured according to theseventh embodiment and the eighth embodiment. The semiconductor assemblyin Comparative Example 6 is manufactured according to the structureshown in FIG. 11 .

The difference between the semiconductor assemblies in ComparativeExample 6 and Examples 10 and 11 is that the first reflective resinlayer 80 and the second reflective resin layer 80′ are absent from thesemiconductor assemblies in Comparative Example 6. In other words, theZener chip 70 in Comparative Example 6 is not encapsulated by the firstreflective resin layer 80 or the second reflective resin layer 80′.

In Examples 10 and 11, the reflective particles, the UV absorber, andthe HALS are the same as those mentioned above, so it is not repeatedherein. Specific components of the first reflective resin layer 80 orthe second reflective resin layer 80′ in Examples 10 and 11 are listedin Table 6. The material of the light transmitting layer 90 in Examples10 and 11 and Comparative Example 6 is a fluoropolymer. Luminousefficiency and the reliability of the semiconductor assembly in Examples10 and 11 and Comparative Example 6 are measured and listed in Table 6.In the luminous efficiency test, the light intensity of thesemiconductor assembly in Comparative Example 6 is defined as 100%.

The thickness H6 of the second reflective resin layer 80′ ranges from150 μm to 200 μm. If the thickness H6 of the second reflective resinlayer 80′ is too thick, a space for the light transmitting layer 90 willbe compressed, and then the luminous efficiency of the semiconductorassembly is decreased. If the thickness H6 of the second reflectiveresin layer 80′ is too thin, the Zener chip 70 cannot be protected, andthe reliability of the semiconductor assembly cannot be enhanced.

TABLE 6 Exam- Exam- Comparative (phr) ple 10 ple 11 Example 6 FirstFirst silicon-based resin 100 — — reflective Reflective particles 40 — —resin layer UV absorber 1 — — HALS 1 — — Second Second silicon-based —100 — reflective resin resin layer Reflective particles — 40 — UVabsorber — 1 — HALS — 1 — Property Luminous efficiency test   88%   91% 100% of semi- Reliability  0 hours  100%   100%  100% conductor test168 hours 99.5% 102.6% 95.3% assembly 336 hours 98.0% 102.5% 91.1% 504hours 97.8% 102.4% 89.8% 672 hours 95.1% 102.1% 85.6% 840 hours 93.2%101.8% 83.1% 1008 hours  92.4%  98.9% 82.07% 

According to the result of Table 6, due to the first reflective layer 80or the second reflective layer 80′ encapsulating the Zener chip 70, thereliability of the semiconductor assembly can be enhanced and theluminous efficiency of the semiconductor assembly can be adequatelymaintained.

Ninth Embodiment

Referring to FIG. 9 , the semiconductor assembly of a ninth embodimentof the present disclosure is similar to the semiconductor assembly ofthe eighth embodiment (FIG. 8 ). The semiconductor assembly includes thesubstrate 10, the light emitting unit 30, the Zener chip 70, the firstreflective resin layer 80, the second reflective resin layer 80′, andthe light transmitting layer 90.

The difference between the ninth embodiment and the eighth embodiment isthat the Zener chip is located at the center area 111, and the Zenerchip is encapsulated by the first reflective resin layer 80. Therefore,the light emitting unit 30, the Zener chip 70, and the first reflectiveresin layer 80 are encapsulated by the light transmitting layer 90.

In the ninth embodiment, the second reflective resin layer 80′ surroundsthe light transmitting layer 90 to form a dense waterproof layer,thereby protecting the light emitting unit 30 or the Zener chip 70 fromcontacting the vapor or air in the environment.

Tenth Embodiment

Referring to FIG. 10 , the semiconductor assembly of a tenth embodimentof the present disclosure is similar to the semiconductor assembly ofthe ninth embodiment (FIG. 9 ). The semiconductor assembly includes thesubstrate 10, the light emitting unit 30, the Zener chip 70, the firstreflective resin layer 80, the second reflective resin layer 80′, andthe light transmitting layer 90. The difference between the tenthembodiment and the ninth embodiment is that the light emitting unit 30is surrounded by the reflective layer 34.

The reflective layer 34 is formed on the side light emitting surface 32of the light emitting unit 30 so as to concentrate the light beamemitted from the light emitting unit 30. The reflective layer 34 canprotect the light emitting unit 30 from contacting vapor in theenvironment. A material of the light emitting unit 30 includes a lighttransmitting resin and reflective particles, such as a silicon-basedresin and PTFE particles. In order to prove that the semiconductorassembly of the present disclosure has a high reliability, thesemiconductor assembly in Examples 12 and 13 are respectivelymanufactured according to the ninth embodiment and the tenth embodiment.The semiconductor assembly in Comparative Example 6 is manufacturedaccording to the structure shown in FIG. 11 .

The difference between the semiconductor assemblies in ComparativeExample 6 and Examples 12 and 13 is that the first reflective resinlayer 80 is absent from the semiconductor assemblies in ComparativeExample 6. In other words, the Zener chip 70 in Comparative Example 6 isnot encapsulated by the first reflective resin layer 80.

In Examples 12 and 13, the reflective particles, the UV absorber, andthe HALS are the same as those mentioned above, so it is not repeatedherein. Specific components of the first reflective resin layer 80 andthe second reflective resin layer 80′ in Examples 12 and 13 are listedin Table 7. The material of the light transmitting layer 90 in Examples12 and 13 and Comparative Example 6 is a fluoropolymer. Luminousefficiency and the reliability of the semiconductor assembly in Examples12 and 13 and Comparative Example 6 are measured and listed in Table 7.In the luminous efficiency test, the light intensity of thesemiconductor assembly in Comparative Example 6 is defined as 100%.

TABLE 7 Exam- Exam- Comparative (phr) ple 12 ple 13 Example 6 FirstFirst silicon-based resin 100 100 — reflective Reflective particles 4040 — resin layer UV absorber 1 1 — HALS 1 1 — Second Secondsilicon-based 100 100 — reflective resin resin layer Reflectiveparticles 40 40 — UV absorber 1 1 — HALS 1 1 — Reflective Lighttransmitting — 60 — layer silicon resin Reflective particles — 40 —Property Luminous efficiency test   93%   98%  100% of semi- Reliability 0 hours   100%   100%  100% conductor test 168 hours 102.2% 102.3%95.3% assembly 336 hours 101.4% 102.1% 91.1% 504 hours 100.4% 101.8%89.8% 672 hours  99.2% 101.1% 85.6% 840 hours  98.3%  99.7% 83.1% 1008hours   97.9%  98.2% 82.07% 

According to the result of Table 7, the reflective layer 34 formed onthe light emitting unit 30 can protect the light emitting unit 30 andenhance the luminous efficiency and the reliability of the semiconductorassembly.

The disposition of the reflective resin layer 40, the first reflectiveresin layer 80, or the second reflective resin layer 80′ can prevent asilicone resin from damaging through the physical reflection mechanismand the chemical absorption mechanism. Therefore, the semiconductorassembly of the present disclosure can have good reliability andadequate luminous efficiency.

The disposition of the inner limiter 13 and the outer limiter 14 candefine the center area 111 and the periphery area 112 and arrange thefirst reflective resin layer 80, the second reflective resin layer 80′,and the light transmitting layer 90 in different regions, such that thereliability of the semiconductor assembly can be enhanced.

The foregoing description of the exemplary embodiments of the disclosurehas been presented only for the purposes of illustration and descriptionand is not intended to be exhaustive or to limit the disclosure to theprecise forms disclosed. Many modifications and variations are possiblein light of the above teaching.

The embodiments were chosen and described in order to explain theprinciples of the disclosure and their practical application so as toenable others skilled in the art to utilize the disclosure and variousembodiments and with various modifications as are suited to theparticular use contemplated. Alternative embodiments will becomeapparent to those skilled in the art to which the present disclosurepertains without departing from its spirit and scope.

What is claimed is:
 1. A semiconductor assembly, comprising: a substratehaving a mounting surface; a retaining wall disposed on the mountingsurface and having an inner surface; wherein an accommodation space isdefined by the inner surface and the mounting surface; a light emittingunit disposed in the accommodation space and disposed on the mountingsurface; wherein the light emitting unit has an upper light emittingsurface and a side light emitting surface; and a reflective resin layerdisposed in the accommodation space and disposed between the innersurface and the side light emitting surface; wherein the reflectiveresin layer contains a based resin, a UV absorber, and reflectiveparticles.
 2. The semiconductor assembly according to claim 1, wherein,relative to the mounting surface, a height of the reflective resin layernear the side light emitting surface is lower than or equal to a heightof the upper light emitting surface.
 3. The semiconductor assemblyaccording to claim 1, wherein the reflective resin layer contacts theside light emitting surface and the inner side surface, and relative tothe mounting surface, a height of the reflective resin layer near theside light emitting surface is lower than a height of the reflectiveresin layer near the inner side surface.
 4. The semiconductor assemblyaccording to claim 1, wherein the reflective resin layer has a listricsurface or a concave surface between the retaining wall and the lightemitting unit.
 5. The semiconductor assembly according to claim 1,wherein, relative to the mounting surface, a thickness of the reflectiveresin layer near the side light emitting surface ranges from 180 μm to300 μm.
 6. The semiconductor assembly according to claim 1, wherein,based on a total weight of the based resin being 100 phr, an amount ofthe UV absorber ranges from 0.1 phr to 15 phr.
 7. The semiconductorassembly according to claim 1, wherein, based on a total weight of thebased resin being 100 phr, an amount of the reflective particles rangesfrom 5 phr to 75 phr.
 8. The semiconductor assembly according to claim1, wherein the reflective resin layer further contains a hindered aminelight stabilizer.
 9. The semiconductor assembly according to claim 8,wherein based on a total weight of the based resin being 100 phr, anamount of the hindered amine light stabilizer ranges from 0.1 phr to 15phr.
 10. The semiconductor assembly according to claim 1, furthercomprising a first light transmitting layer disposed between thesubstrate and the reflective layer, wherein the first light transmittinglayer contains a first based resin and a UV absorber.
 11. Thesemiconductor assembly according to claim 10, wherein, based on a totalweight of the first based resin being 100 phr, an amount of the UVabsorber ranges from 0.1 phr to 2 phr.
 12. The semiconductor assemblyaccording to claim 10, wherein, relative to the mounting surface, athickness of the first light transmitting layer near the side lightemitting surface ranges from 50 μm to 100 μm.
 13. The semiconductorassembly according to claim 10, wherein the first light transmittinglayer further contains a hindered amine light stabilizer, and based on atotal weight of the first based resin being 100 phr, an amount of thehindered amine light stabilizer ranges from 0.1 phr to 15 phr.
 14. Thesemiconductor assembly according to claim 10, wherein further comprisinga second light transmitting layer disposed between the substrate and thefirst light transmitting layer, wherein the second light transmittinglayer contains a second based resin and a UV absorber, and an amount ofthe UV absorber in the second light transmitting layer is larger than anamount of the UV absorber in the first light transmitting layer.
 15. Thesemiconductor assembly according to claim 14, wherein, based on a totalweight of the second based resin being 100 phr, the amount of the UVabsorber in the second light transmitting layer ranges from 5 phr to 15phr.
 16. The semiconductor assembly according to claim 14, wherein,relative to the mounting surface, a thickness of the second lighttransmitting layer near the side light emitting surface ranges from 70μm to 150 μm.
 17. The semiconductor assembly according to claim 14,wherein the second light transmitting layer further contains a hinderedamine light stabilizer, and based on a total weight of the second basedresin being 100 phr, an amount of the hindered amine light stabilizerranges from 0.1 phr to 15 phr.
 18. The semiconductor assembly accordingto claim 1, wherein the based resin is a methyl silicon resin, a methylphenyl vinyl silicon resin, or a combination thereof.
 19. Thesemiconductor assembly according to claim 1, wherein a protection layeris formed on the upper light emitting surface and the side lightemitting surface of the light emitting unit, and the protection layercontains a light transmitting silicon resin.